Categories Best Sale RA07H4047M Mitsubishi RF Module 400-470 MHz 7 Watt 12V
The RA07H4047M is a 7-watt RF MOSFET Amplifier Module designed for 12.5-volt portable radios operating in the 400-470MHz range. Here are some key details about this module:
Frequency Range: 400-470MHz
Output Power: >7W at VDD=12.5V, VGG=3.5V, Pin=20mW
Efficiency: >40% at Pout=7W (VGG control), VDD=12.5V, Pin=20mW
Broadband Frequency Range: 400-470MHz
Module Size: 30 x 10 x 5.4 mm
Linear Operation: Possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
This module utilizes enhancement-mode MOSFET transistors and is suitable for non-linear FM modulation. However, it can also be used for linear modulation by adjusting the drain quiescent current with the gate voltage
The RA07H4047M is a 7-watt RF MOSFET Amplifier Module designed for 12.5-volt portable radios operating in the 400-470MHz range. Here are some key details about this module:
Frequency Range: 400-470MHz
Output Power: >7W at VDD=12.5V, VGG=3.5V, Pin=20mW
Efficiency: >40% at Pout=7W (VGG control), VDD=12.5V, Pin=20mW
Broadband Frequency Range: 400-470MHz
Module Size: 30 x 10 x 5.4 mm
Linear Operation: Possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
This module utilizes enhancement-mode MOSFET transistors and is suitable for non-linear FM modulation. However, it can also be used for linear modulation by adjusting the drain quiescent current with the gate voltage
The RA07H4047M is a 7-watt RF MOSFET Amplifier Module designed for 12.5-volt portable radios operating in the 400-470MHz range. Here are some key details about this module:
Frequency Range: 400-470MHz
Output Power: >7W at VDD=12.5V, VGG=3.5V, Pin=20mW
Efficiency: >40% at Pout=7W (VGG control), VDD=12.5V, Pin=20mW
Broadband Frequency Range: 400-470MHz
Module Size: 30 x 10 x 5.4 mm
Linear Operation: Possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
This module utilizes enhancement-mode MOSFET transistors and is suitable for non-linear FM modulation. However, it can also be used for linear modulation by adjusting the drain quiescent current with the gate voltage